Nonlinear transport and fluctuation characteristics of doped semiconductors
Articles
R. Katilius
Semiconductor Physics Institute, Lithuania
J. Liberis
Semiconductor Physics Institute, Lithuania
A. Matulionis
Semiconductor Physics Institute, Lithuania
R. Raguotis
Semiconductor Physics Institute, Lithuania
P. Sakalas
Semiconductor Physics Institute, Lithuania
Published 1998-12-21
https://doi.org/10.15388/NA.1998.2.0.15285
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How to Cite

Katilius R., Liberis J., Matulionis A., Raguotis R. and Sakalas P. (1998) “Nonlinear transport and fluctuation characteristics of doped semiconductors”, Nonlinear Analysis: Modelling and Control, 2(1), pp. 35-42. doi: 10.15388/NA.1998.2.0.15285.

Abstract

Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced by interelectron scattering, are interpreted in terms of effective electron temperature. Electron Fick’s diffusion coefficients in longitudinal and transfer direction are estimated.

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